N-ch Trench MOS FET

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATU

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KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N-ch Trench MOS FET

General Description\nThis Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applicationsFEATURES\ • VDSS= 75V, ID= 170A\n• Drain-Source ON Resistance :\n   RDS(ON)=3.4mΩ (Max.) @VGS = 10V;

KEC

开益禧

SOP-8

KU

上传：深圳市哲瀚电子科技有限公司

INTEL(英特尔)

上传：深圳市盈慧通电子有限公司

QFP-132

INTEL/英特尔

上传：深圳市清腾科技有限公司