EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. • Complementary to KTA511T.

文件：77.1 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

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EPITAXIAL PLANAR NPN TRANSISTOR

文件：51.84 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR

KEC

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Operational Amplifier and Adjustable Reference

文件：735.37 Kbytes 页数：17 Pages

NSC

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Operational Amplifier and Adjustable Reference

文件：735.37 Kbytes 页数：17 Pages

NSC

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N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA611TA is a switching device which can be driven directly by a 2.5-V power source. The µPA611TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5-V power source • Low gate

文件：52.54 Kbytes 页数：8 Pages

NEC

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