KSMU14N15

150V N-CHANNEL MOSFET

FQB14N15

150VN-ChannelMOSFET

Features •14A,150V,RDS(on)=0.21Ω@VGS=10V •Lowgatecharge(typical18nC) •LowCrss(typical22pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FQD14N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQD14N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FQI14N15

150VN-ChannelMOSFET

Features •14A,150V,RDS(on)=0.21Ω@VGS=10V •Lowgatecharge(typical18nC) •LowCrss(typical22pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

FQP14N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FQP14N15

STEREO200WCLASS-TDIGITALAUDIOAMPLIFIERDRIVERUSINGDIGITALPOWERPROCESSINGTECHNOLOGY

GENERALDESCRIPTION TheTK2150(TC2001/TP2150chipset)isatwo-channel,200W(6Ω)perchannelAmplifierDriverthatusesTripath’sproprietaryDigitalPowerProcessing(DPP™)technology.Class-TamplifiersofferboththeaudiofidelityofClass-ABandthepowerefficiencyofClass-Damplifiers. F

FQP14N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14.4A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQPF14N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9.8A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQPF14N15

150VNCHANNELMOSFET

150VN-ChannelMOSFET