Fast Recovery Diode

文件：620.51 Kbytes 页数：5 Pages

KSS

京瓷

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Features • Rugged polysilicon gate cell structure • high current handling capability, latch-proof • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request: MSAH(G)60F60B • high frequency IGBT, low swi

文件：50.74 Kbytes 页数：2 Pages

MICROSEMI

美高森美

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Features • Rugged polysilicon gate cell structure • high current handling capability, latch-proof • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request: MSAH(G)60F60B • high frequency IGBT, low swi

文件：50.74 Kbytes 页数：2 Pages

MICROSEMI

美高森美

ULTRAFAST RECTIFIER

Features:  Ultra-Fast switching  High current capability  Low reverse leakage current  High surge current capability  Plastic Material has UL Flammability Classification 94V-O  Terminals finish: 100 Pure Tin  This is a Pb − free device  All SMC parts are traceable to the wafer lot

文件：834.57 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子