High Voltage High Speed Power Switch Application

High Voltage High Speed Power Switch Application • High Breakdown Voltage : BVCBO=800V • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time spread

文件：101.85 Kbytes 页数：6 Pages

Fairchild

仙童半导体

High Voltage & High Speed Power Switch Application

High Voltage & High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half-bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time spread even though corner spirit • Low base

文件：98.02 Kbytes 页数：6 Pages

Fairchild

仙童半导体

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.4V(Max) @IC= 0.4A APPLICATIONS · Low frequency amplifier

文件：299.61 Kbytes 页数：2 Pages

ISC

无锡固电

High Voltage & High Speed Power Switch Application

High Voltage & High Speed Power Switch Application • High breakdown Voltage :BVCBO=800V • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time spr

文件：100.69 Kbytes 页数：6 Pages

Fairchild

仙童半导体

High Voltage High Speed Power Switch Application

High Voltage High Speed Power Switch Application • High Breakdown Voltage : BVCBO=800V • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time spread

文件：101.85 Kbytes 页数：6 Pages

Fairchild

仙童半导体

High Voltage High Speed Power Switch Application

ONSEMI

安森美半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 2A TO220-3

ONSEMI

安森美半导体