CMOS INTEGRATED CIRCUIT

文件：315.69 Kbytes 页数：6 Pages

SAMSUNG

三星

CMOS INTEGRATED CIRCUIT

Samsung

三星

8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and R

文件：302.54 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

PNP SILICON POWER TRANSISTORS

The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications. Features • Switching Regulators • Inverters • Solenoid an

文件：302.54 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

DOLBY PROLOGIC DECODER

DOLBY PROLOGIC DECODER

文件：103.82 Kbytes 页数：4 Pages

NPC