EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION. FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process. ● High Output Current : 800mA.

文件：69.53 Kbytes 页数：5 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

High Current BRT, TS6, 50V, 0.8A

• With Built-in bias resistors\n• Simplify circuit design.\n• Reduce a quantity of Parts and Manufacturing Process;

KEC

开益禧

Low-Noise, Regulated, -2V GaAsFET Bias

General Description The MAX840/MAX843/MAX844 low-noise, inverting charge-pump power supplies are ideal for biasing GaAsFETs in cellular telephone transmitter amplifiers. They operate with inputs down to 2.5V. Features ♦ Fixed -2V or Adjustable -0.5V to -9.4V Output at 4mA (MAX840) ♦ 2.5V to 10

文件：161.02 Kbytes 页数：10 Pages

MAXIM

美信

Integrated Circuit TV Video IF Phase Locked Loop (PLL) Synchronous Detector

Description: The NTE843 is a linear IC synchronous detector employing a phase–locked oscillator to demodulate the 45.75MHz video IF signals in color–TV receivers. The NTE843 features AFT voltage for DC control of the tuner; an adjustment for the zero–carrier DC level at the video output terminal;

文件：20.61 Kbytes 页数：2 Pages

NTE

NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5603, 2SC5600) • Low voltage operation Q1: Built-in high gain transistor fT = 13.5 GHz, |S21e|2 = 10.0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz Q2: Built-in low phase distortion t

文件：76.12 Kbytes 页数：7 Pages

NEC

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