EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process. ● High Packing Density.

文件：50.53 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Complex BRT, TES6, 50V, 0.1A

• With Built-in bias resistors\n• Simplify circuit design.\n• Reduce a quantity of Parts and Manufacturing Process;

KEC

开益禧

Integrated Circuit Low Power Low Offset Voltage Comparator

Description: The NTE834 and NTE834SM are precision voltage comparators designed to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply vo

文件：26.14 Kbytes 页数：3 Pages

NTE

Integrated Circuit Low Power Low Offset Voltage Comparator

Description: The NTE834 and NTE834SM are precision voltage comparators designed to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply vo

文件：26.14 Kbytes 页数：3 Pages

NTE

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION The µPA834TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.4 dB TYP., Q2 : NF = 1.2 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 12.0 dB TYP. Q2 : |S21e

文件：68.83 Kbytes 页数：12 Pages

NEC

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