EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

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KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors

2000 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A

文件：200.01 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

DC-6000 MHZ CASCADABLE GAAS HBT MMIC AMPLIFIER

[Sirenza]

文件：351.5 Kbytes 页数：5 Pages

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DC-6.0 GHz, Cascadable GaAs MMIC Amplifier

[Sirenza] Product Description Sirenza Microdevices SNA-286 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface-mountable plastic package. At 1950 MHz, this amplifier provides 15.5dB of gain and +14dBm of P1dB power when biased at 50mA. Product Features • Patented, Reli

文件：350.68 Kbytes 页数：4 Pages

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