USM PACKAGE

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ·High emitter-base voltage : VEBO=25V(Min) ·High reverse hFE: reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ·Low on resistance : Ron=1Ω(Typ.) (IB=5mA) ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a

文件：21.31 Kbytes 页数：1 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APPLICATION.\nAUDIO MUTING APPLICATION.\n\nFEATURES\n·High emitter-base voltage : VEBO=25V(Min)\n·High reverse hFE: reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)\n·Low on resistance : Ron=1Ω(Typ.) (IB=5mA)\n·With Built-in Bias Resistors.\n·Simplify Circuit Design.\n·Reduce a Quantity of Parts a ·High emitter-base voltage : VEBO=25V(Min)\n·High reverse hFE: reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)\n·Low on resistance : Ron=1Ω(Typ.) (IB=5mA)\n·With Built-in Bias Resistors.\n·Simplify Circuit Design.\n·Reduce a Quantity of Parts and Manufacturing Process.;

KEC

开益禧

PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

文件：38.4 Kbytes 页数：2 Pages

POLYFET

Low Dropout 1 Ampere Linear Regulator Family

文件：102.7 Kbytes 页数：10 Pages

TI

德州仪器

Low Dropout 1 Ampere Linear Regulator Family

文件：102.7 Kbytes 页数：10 Pages

TI

德州仪器