photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC

Description The KPS1008C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC (in which a photo diode, signal processing circuit, constant voltage circuit and modulation circuit are integrated) at the light receiving side. Features

文件：137.21 Kbytes 页数：3 Pages

KODENSHI

可天士

Chip Inductors

文件：119.59 Kbytes 页数：8 Pages

KOA

NPN (LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING)

LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Complementary to KSA708 High Collector-Base Voltage VCBO = 80V Collector Current IC = 700mA Collector Disslpation PC= 800mW

文件：71.97 Kbytes 页数：2 Pages

Samsung

三星

Low Frequency Amplifier Medium Speed Switching

Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW • Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base) • Non suffix “-C” means Side Collector

文件：39.76 Kbytes 页数：4 Pages

Fairchild

仙童半导体