型号：BZX84C22W；Surface Mount Zener Voltage Regulator Diodes

FEATURES ● Planar die construction ● 200mW power dissipation ● Zener voltages from 2.4V - 39V ● Ultra-small surface mount package power dissipation

文件：58.8 Kbytes 页数：2 Pages

SECELECTRONICS

型号：BZX84C22W；Package：SOT-323；Zener Diode

Features ◇ Planar Die Construction ◇ 200mW Power Dissipation ◇ Zener Voltages from 2.4V - 39V ◇ Ultra-Small Surface Mount Package Power dissipation

文件：1.99965 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

型号：KP823C03；SCHOTTKY BARRIER DIODE

Features ● Low VF ● Super high speed switching ● High reliability by planer design Applications ● High speed power switching

文件：79.04 Kbytes 页数：3 Pages

Fuji

富士电机

型号：KP823C04；SCHOTTKY BARRIER DIODE

Features ● Low VF ● Super high speed switching ● High reliability by planer design Applications ● High speed power switching

文件：74.16 Kbytes 页数：4 Pages

Fuji

富士电机

型号：KP823C09；SCHOTTKY BARRIER DIODE

Features ● Surface mount device ● Low VF ● Super high speed switching ● High reliability by planer design Applications ● High speed power switching

文件：73.08 Kbytes 页数：3 Pages

Fuji

富士电机

型号：KP848；QUICK CONNECT RECTIFIER

Quick Connect Rectifier • Rugged Construction • Glass Passivated Die • Convenient Mounting • Quick Connect 1/4 Tabs • RRM to 1000V

文件：106.05 Kbytes 页数：2 Pages

Microsemi

美高森美

型号：KP883C02；SCHOTTKY BARRIER DIODE

Features ● Surface mount device ● Low VF ● Super high speed switching ● High reliability by planer design Applications ● High speed power switching

文件：79.08 Kbytes 页数：3 Pages

Fuji

富士电机

型号：KP8N60D；N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, I

文件：393.33 Kbytes 页数：6 Pages

KECKEC CORPORATION

KEC株式会社

型号：KP8N60F；N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, I

文件：390.11 Kbytes 页数：6 Pages

KECKEC CORPORATION

KEC株式会社

型号：KP8N60F；isc N-Channel MOSFET Transistor

• DESCRITION • Suitable for active power factor correction and switching mode Power supplies • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.58Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perfor

文件：394.89 Kbytes 页数：2 Pages

ISC

无锡固电