丝印：4600；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON)

文件：1.46992 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4600；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 6.9 A (VGS = 10V) RDS(ON)

文件：2.41715 Mbytes 页数：7 Pages

KEXIN

科信电子

N+P MOSFETs

Kexin

科信电子

RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS

DESCRIPTION The SD4600 is designed for 960MHz mobile base stations in both analog and digital applications. Including double input and output matching networks, the SD4600 features high impedances allowing operation over the full 860 to 960 MHz bandwidth. ■ GOLD METALLIZATION ■ 860-960 MHz ■ 2

文件：65.26 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

High Intensity LED in 3 mm Tinted Diffused Package

文件：70.68 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Intensity LED in 3 mm Tinted Diffused Package

文件：71.01 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司