EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. • Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. • Complementary to the KN2907S/2907AS.

文件：498.32 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR

KEC

General Purpose Transistor

General Purpose Transistor • Collector-Emitter Voltage: VCEO= 30V • Collector Dissipation: PC(max)=625mW

文件：37.79 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

General Purpose Transistor

Features • Collector-Emitter Voltage: VCEO= 40V • Collector Power Dissipation: PC (max)=625mW • Available as PN2222A

文件：24.86 Kbytes 页数：3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN General Purpose Amplifier

文件：110.03 Kbytes 页数：3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司