KM41V4000D中文资料三星数据手册PDF规格书

DESCRIPTION

This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version.

This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high performance microprocessor systems.

FEATURES

• Part Identification

- KM41C4000D/D-L(5V, 1K Ref.)

- KM41V4000D/D-L(3.3V, 1K Ref.)

• Active Power Dissipation

• Refresh Cycles

• Performance Range

• Fast Page Mode operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (3.3V, L-ver only)

• Fast parallel test mode capability

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Common I/O using early write

• JEDEC Standard pinout

• Available in 26(20)-pin SOJ 300mil and TSOP(II) 300mil packages

• +5V±10 power supply(5V product)

• +3.3V±0.3V power supply(3.3V product)