KM416C4100B中文资料三星数据手册PDF规格书

DESCRIPTION

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES

• Part Identification

- KM416C4000B(5.0V, 8K Ref.)

- KM416C4100B(5.0V, 4K Ref.)

• Active Power Dissipation

• Refresh Cycles

* Access mode & RAS only refresh mode : 8K cycle/64ms

CAS-before-RAS & Hidden refresh mode : 4K cycle/64ms

• Performance Range

• Fast Page Mode operation

• 2CAS Byte/Word Read/Write operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Fast parallel test mode capability

• TTL(5.0V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Available in Plastic TSOP(II) package

• +5.0V±10 power supply