Complementary 20-V (D-S) MOSFET

文件：70.36 Kbytes 页数：2 Pages

KEXIN

科信电子

JFETs

Kexin

科信电子

Dual, Ultra-Low-Power, 8-Bit, Voltage-Output DACs

文件：1.54489 Mbytes 页数：23 Pages

MAXIM

美信

Silicon Controlled Rectifier (SCR) 5 Amp

Description: The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled rectifiers (SCR’s) are intended for use in power–control and power–switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward c

文件：22.63 Kbytes 页数：2 Pages

NTE

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

文件：28.55 Kbytes 页数：2 Pages

EIC