N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.0867 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, ID

文件：865.58 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：501.81 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：501.81 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description\nThis planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.FEATURES\n VDSS=600V, ID=7.5A  VDSS=600V, ID=7.5A\n Drain-Source ON Resistance :\n   RDS(ON)=1.2 @VGS=10V\n Qg(typ.)= 32.5nC ;

KEC