N-Channel 700 V (D-S) Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.0137 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 700 V (D-S) Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.0137 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES • VDSS= 700V, ID= 3A • Drain-Source ON Resistance

文件：360.9 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

N-Channel 700 V (D-S) Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.01311 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES • VDSS= 700V, ID= 3A • Drain-Source ON Resistance

文件：360.9 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)