丝印：KGD；Package：TSOP6F；MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V)

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