MFQ930P

MultipleSmall-SignalTransistors

MHW930

30W925.960MHzRFPOWERAMPLIFIER

TheRFLine UHFSiliconFETPowerAmplifier DesignedspecificallyforthePanEuropeanDigitalExtendedEGSMbasestationapplicationsat925–960MHz.TheMHW930operatesfroma26voltsupplyandrequires60mWofRFinputpower. •Specified26Voltand25°CCharacteristics:

MLED930

InfraredLED

InfraredLED

MM930LITE

DevelopmentModule

Features ForafulllistoftheFT93xfeaturesrefertothe FT93xdatasheet. Inaddition,theMM930Litemodulehasthe followingfeatures: FT930Q68-pinQFNpackagemicrocontroller. MicroSDcardsocketsupport. Inbuilt8MByteEflashmemory. AMicro-BUSBforconnectingtoaUSB

MM930LITE

EvaluationBoard

1.1Features TheME817EVhasthefollowingfeatures: Supports40-pinLVDSdisplayupto1280x800 Supports50-pinRGBdisplayupto1024x600 TrimmableonboardLCDbiasingvoltages OnboardLCDbacklightLEDDriver Onboardaudiopoweramplifierandaudioconnectorforexternalspea

MM930MINI

ModuleHighSpeedUSB-SerialMCUDevelopmentModule

Features USB2.0Hi-Speedcompatible Reduceddevelopmenttime Rapidintegrationintoexistingsystems USBpowered–noexternalpowersupplyneeded BasedontheUSBHi-SpeedFT930Qdevice EntireUSBprotocolhandledbyD2xxhardwareengine USBmicro-Bconnectorcommononmany

MMBR930

TheRFLineNPNSiliconHighFrequencyTransistor

MMBR930L

TheRFLineNPNSiliconHighFrequencyTransistor

MMBTSC930

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forFMRFamp,mixer,osc,converterandIF amplifier. Thetransistorissubdividedintofourgroups,C,D,E andF,accordingtoitsDCcurrentgain. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.

MOX930

High-voltageSuperMoxresistorshavebeendeveloped