N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology, DC/

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KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description\nThis planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor\ncorrection , electronic lamp ballasts based on half bridge topology, DC/D VDSS = 60V, ID = 60A\nDrain-Source ON Resistance : RDS(ON) =13.2m (Max.) @VGS= 10V\nQg(typ.) = 48nC;

KEC

N-Channel 60 V (D-S) MOSFET

文件：990.64 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

TMOS POWER FET 60 AMPERES 60 VOLTS

HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components wit

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Motorola

摩托罗拉

TMOS POWER FET 60 AMPERES 60 VOLTS

HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components wit

文件：280.75 Kbytes 页数：12 Pages

Motorola

摩托罗拉