MTP50N06V

N-Channel60-V(D-S)MOSFET

MTP50N06V

N?묬hannelPowerMOSFET

MTP50N06V

TMOSV??PowerFieldEffectTransistor

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50an

MTP50N06V

iscN-ChannelMOSFETTransistor

MTP50N06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.028Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP50N06VL

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and

MTP50N06VL

N?묬hannelPowerMOSFET

MTP50N06VL

50A,60VHeatsinkPlanarN-ChannelPowerMOSFET

NTD50N06

N-Channel60V(D-S)MOSFET

OM50N06SA

LOWVOLTAGE,LOWRDS(on)POWERMOSFETSINHERMETICISOLATEDPACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr