N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 3A • Dra

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KEC

KEC(Korea Electronics)

Advanced high cell denity trench technology for ultra RDS(ON)

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KERSEMI

600V N-Channel MOSFET

文件：1.66685 Mbytes 页数：6 Pages

KERSEMI

This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

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KERSEMI