MTP1N60

N-ChannelMosfetTransistor

•DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent-ID=1A@TC=25°C •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=8Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirements

MTP1N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP1N60E

TMOSPOWERFET1.0AMPERES600VOLTSRDS(on)=8.0OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MTP1N60E

N?묬hannelPowerMOSFET

NDDL1N60Z

N-ChannelPowerMOSFET

NDTL1N60Z

N-ChannelPowerMOSFET

NFT1N60

N-ChannelMOSFET

NJ1N60

1.2A600VN-CHANNELPOWERMOSFET

NJ1N60A-LI

1.2A600VN-CHANNELPOWERMOSFET

NJ1N60-BL

1.2A600VN-CHANNELPOWERMOSFET