| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS(Min.)=500V,ID=15A •Drain-SourceONRes | KECKEC CORPORATION KEC株式会社 | KEC | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
15A,500VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
15A500VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
N-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
50VN-ChannelMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
15A500VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
15A500VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
15A,500V,0.38Ohm,N-ChannelSMPSPowerMOSFET Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature Applications | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelSMPSPowerMOSFET Features ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ●ReducedrDS(ON) ●ReducedMillerCapacitanceandLowInputCapacitance ●ImprovedSwitchingSpeedwithLowEMI | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
15A,500V,0.38Ohm,N-ChannelSMPSPowerMOSFET Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature Applications | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
15A,500V,0.38Ohm,N-ChannelSMPSPowerMOSFET Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature Applications | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
500VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
500VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
15A500VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
N-ChannelSMPSPowerMOSFET Features ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ●ReducedrDS(ON) ●ReducedMillerCapacitanceandLowInputCapacitance ●ImprovedSwitchingSpeedwithLowEMI | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-ChannelEnhancementModePowerMOSFET | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | BWTECH |
详细参数
- 型号：
KF15N50
- 制造商：
KEC
- 制造商全称：
KEC(Korea Electronics)
- 功能描述：
N CHANNEL MOS FIELD EFFECT TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KEC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
23+ |
N/A |
58600 |
一级代理放心采购 |
询价 | |||
HLX |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||||
Amphenol Anytek |
23+ |
原厂封装 |
8927 |
只做原装只有原装现货实报 |
询价 | ||
23+ |
N/A |
58600 |
一级代理放心采购 |
询价 | |||
KEC |
2006 |
TO252 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
KEC |
23+ |
TO252 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
KEC |
21+ |
TO252 |
10000 |
全新原装 公司现货 价格优 |
询价 | ||
KEC |
22+ |
TO252 |
3255 |
强势库存!原装现货! |
询价 | ||
KEC |
22+ |
TO252 |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
询价 |
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