N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, ID

文件：401.95 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, ID

文件：401.95 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

Advanced high cell denity trench technology for ultra RDS(ON)

文件：700.09 Kbytes 页数：4 Pages

KERSEMI

600V N-Channel MOSFET

文件：2.16375 Mbytes 页数：7 Pages

KERSEMI