Infrared Emitting Diodes(GaAs)

文件：184.81 Kbytes 页数：2 Pages

KODENSHI

可天士

Infrared Emitting Diodes(GaAs)

Kodenshi-AUK

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch

文件：113.55 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

.Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor

Features ●Especially suitable for applications from 460 nm to 1080 nm (SFH 314) and of 880 nm (SFH 314 FA) ●High linearity ●5 mm plastic package Applications ●Computer-controlled flashes ●Photointerrupters ●Industrial electronics ●For control and drive circuits

文件：45.49 Kbytes 页数：5 Pages

SIEMENS

西门子

.Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor

Features ●Especially suitable for applications from 460 nm to 1080 nm (SFH 314) and of 880 nm (SFH 314 FA) ●High linearity ●5 mm plastic package Applications ●Computer-controlled flashes ●Photointerrupters ●Industrial electronics ●For control and drive circuits

文件：45.49 Kbytes 页数：5 Pages

SIEMENS

西门子