Complementary PowerTrench Half-Bridge MOSFET

Features ● N-Channel 9.3 A, 30 V RDS(ON) = 18m @ VGS = 10 V RDS(ON) = 23m @ VGS =4.5V ● P-Channel -5.6 A, -20 V RDS(ON) = 46 m @ VGS =- 4.5 V RDS(ON) = 63 m @ VGS =-2.5V

文件：77.53 Kbytes 页数：3 Pages

KEXIN

科信电子

N+P MOSFETs

Kexin

科信电子

Complementary (N- and P-Channel) MOSFET Half-Bridge

Features • TrenchFET Power MOSFET

文件：57.73 Kbytes 页数：2 Pages

KEXIN

科信电子

Complementary MOSFET Half-Bridge (N- and P-Channel)

Complementary MOSFET Half-Bridge (N- and P-Channel)

文件：58.27 Kbytes 页数：2 Pages

KEXIN

科信电子

GaAlAs Red Light Emitting Diode

GaAlAs Red Light Emitting Diode For optical fiber communications and control systems Features ● Red light emission close to monochromatic light : λP = 680 nm ● High-power output, high-efficiency : PO = 3 mW ● High coupling characteristics and suits to a plastic fiber ● High-speed response :

文件：41.23 Kbytes 页数：2 Pages

PANASONIC

松下