N-Channel UltraFET Trench MOSFET

Features ● RDS(ON) = 0.040 (Typ.), VGS = 10V ● Qg(TOT) = 29nC (Typ.), VGS = 10V ● Low QRR Body Diode ● Maximized efficiency at high frequencies ● UIS Rated

文件：55.04 Kbytes 页数：2 Pages

KEXIN

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Kexin

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文件：1.93793 Mbytes 页数：22 Pages

MAXIM

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Silicon NPN Transistor High Current Switch

Features: • Low Collector Emitter Saturation Voltage • High Current Capacity Applications: • Relay Drivers • High Speed Inverters • Converters

文件：21.86 Kbytes 页数：2 Pages

NTE

Negative Output Flyback Pulse Width Modulator

文件：129.22 Kbytes 页数：5 Pages

TI

德州仪器