首页 >KB847-B(SMD)>规格书列表

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KB847BC	文件：276.36 Kbytes Page：9 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB847(4-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB847BD	文件：276.36 Kbytes Page：9 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB847(4-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB847C	文件：276.36 Kbytes Page：9 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB847(4-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB847CD	文件：276.36 Kbytes Page：9 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB847(4-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB847D	文件：276.36 Kbytes Page：9 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB847(4-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KB847L	文件：276.36 Kbytes Page：9 Pages	GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB847(4-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta	KingbrightKingbright Company LLC 今台电子今台电子股份有限公司	Kingbright
KC847	文件：77.41 Kbytes Page：3 Pages	NPNTransistor Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司	KEXIN
KC847A	文件：77.41 Kbytes Page：3 Pages	NPNTransistor Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司	KEXIN
KC847AT	文件：39.82 Kbytes Page：1 Pages	NPNGeneralPurposeTransistors ■Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司	KEXIN
KC847B	文件：77.41 Kbytes Page：3 Pages	NPNTransistor Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司	KEXIN

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