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型号	下载订购	功能描述	制造商上传企业	LOGO
K9F5616Q0C-D	文件：655.94 Kbytes Page：39 Pages	512Mb/256Mb 1.8V NAND Flash Errata GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica 文件：655.94 Kbytes 页数：39 Pages	Samsung 三星	Samsung
K9F5616Q0C-D	文件：655.94 Kbytes Page：39 Pages	512Mb/256Mb 1.8V NAND Flash Errata GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica 文件：655.94 Kbytes 页数：39 Pages	Samsung 三星	Samsung
K9F5616Q0C-D	文件：684.11 Kbytes Page：42 Pages	32M x 8 Bit , 16M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica 文件：684.11 Kbytes 页数：42 Pages	Samsung 三星	Samsung
K9F5616Q0C-D	文件：680.69 Kbytes Page：41 Pages	32M x 8 Bit 16M x 16 Bit NAND Flash Memory 文件：680.69 Kbytes 页数：41 Pages	Samsung 三星	Samsung
K9F5616Q0C-DCB0	文件：655.94 Kbytes Page：39 Pages	512Mb/256Mb 1.8V NAND Flash Errata GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica 文件：655.94 Kbytes 页数：39 Pages	Samsung 三星	Samsung
K9F5616Q0C-DIB0	文件：655.94 Kbytes Page：39 Pages	512Mb/256Mb 1.8V NAND Flash Errata GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica 文件：655.94 Kbytes 页数：39 Pages	Samsung 三星	Samsung

详细参数

型号：
K9F5616Q0C-D
制造商：
SAMSUNG
制造商全称：
Samsung semiconductor
功能描述：
32M x 8 Bit 16M x 16 Bit NAND Flash Memory

供应商	型号	品牌	批号	封装	库存	备注	价格
齐创科技(上海,北京,青岛)有限公司	K9F5616Q0C-DCB0	SAMSUNG	23+	TSOP	5000	原装正品,假一罚十	询价
深圳市华来深电子有限公司	K9F5616Q0C-DIB0	SAMSUNG	23+	BGA	8560	受权代理!全新原装现货特价热卖!	询价
深圳市宝芯创电子有限公司	K9F5616Q0C-DCB0	SAMSUNG/三星	10+	BGA	16067	只做原厂原装,认准宝芯创配单专家	询价
深圳市昊创电子有限公司	K9F5616Q0C-DCB0	SAMSUNG/三星	1902+	BGA	2734	代理品牌	询价
深圳市威尔健半导体有限公司	K9F5616Q0C-DIB0	SAMSUNG/三星	23+	BGA	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	K9F5616Q0C-DIB0	SAMSUNG/三星	21+	BGA	10000	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	K9F5616Q0C-DIB0	SAMSUNG/三星	23+	BGA	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市胜彬电子有限公司	K9F5616Q0C-DIB0	SAMSUNG/三星	22+	BGA	8000	原装正品支持实单	询价
深圳市威雅利发展有限公司	K9F5616Q0C-DIB0	SAMSUNG	0528+	BGA	2440	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市亿联芯电子科技有限公司	K9F5616Q0C-DIB0	SAMSUNG/三星	2023+	BGA	2440	专注全新正品,优势现货供应	询价

更多K9F5616Q0C-D供应商更新时间2025-10-4 15:35:00

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