512Mb/256Mb 1.8V NAND Flash Errata

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

文件：655.94 Kbytes 页数：39 Pages

Samsung

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32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

文件：684.11 Kbytes 页数：42 Pages

Samsung

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32M x 8 Bit 16M x 16 Bit NAND Flash Memory

文件：680.69 Kbytes 页数：41 Pages

Samsung

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512Mb/256Mb 1.8V NAND Flash Errata

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

文件：655.94 Kbytes 页数：39 Pages

Samsung

三星

512Mb/256Mb 1.8V NAND Flash Errata

GENERAL DESCRIPTION Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica

文件：655.94 Kbytes 页数：39 Pages

Samsung

三星