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K9F2G08U0A-P中文资料三星数据手册PDF规格书

K9F2G08U0A-P
厂商型号

K9F2G08U0A-P

功能描述

FLASH MEMORY

文件大小

999.07 Kbytes

页面数量

44

生产厂商 Samsung semiconductor
企业简称

SAMSUNG三星

中文名称

三星半导体官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-6-23 22:58:00

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K9F2G08U0A-P规格书详情

GENERAL DESCRIPTION

Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

• Voltage Supply

- 1.65V ~ 1.95V

- 2.70V ~ 3.60V

• Organization

- Memory Cell Array : (256M + 8M) x 8bit

- Data Register : (2K + 64) x 8bit

• Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

• Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 25µs(Max.)

- Serial Access : 25ns(Min.)

(*K9F2G08R0A: tRC = 42ns(Min))

• Fast Write Cycle Time

- Page Program time : 200µs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

-Endurance : 100K Program/Erase Cycles(with 1bit/512Byte

ECC)

- Data Retention : 10 Years

• Command Driven Operation

• Intelligent Copy-Back with internal 1bit/528Byte EDC

• Unique ID for Copyright Protection

• Package :

- K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE

63 - Ball FBGA I (10 x 13 / 0.8 mm pitch)

- K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F2G08U0A-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

产品属性

  • 型号:

    K9F2G08U0A-P

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    FLASH MEMORY

供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
2016+
TSOP48
1980
只做原装,假一罚十,公司可开17%增值税发票!
询价
SAMSUNG
24+
TSSOP48
15000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
JRC
23+
SOP
14097
询价
SAMSUNG/三星
22+
TSOP48
100000
代理渠道/只做原装/可含税
询价
Samsung
24+
TSSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
SAMSUNG
07+
TSOP-48
145
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
SAMSUNG(三星)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
SAMSUNG/三星
20+
TSOP
35830
原装优势主营型号-可开原型号增税票
询价
SAMSUNG/三星
23+
TSOP48
5000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
SAMSUNG
TSSOP
68500
一级代理 原装正品假一罚十价格优势长期供货
询价