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K9F1G08D0M中文资料三星数据手册PDF规格书

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厂商型号

K9F1G08D0M

功能描述

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

文件大小

729.28 Kbytes

页面数量

40

生产厂商

Samsung

中文名称

三星

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-16 17:42:00

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K9F1G08D0M价格和库存,欢迎联系客服免费人工找货

K9F1G08D0M规格书详情

GENERAL DESCRIPTION

Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin ing of data. Even the write-intensive systems can take advantage of the K9F1GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

· Voltage Supply

-1.8V device(K9F1GXXQ0M): 1.70V~1.95V

- 2.65V device(K9F1GXXD0M) : 2.4~2.9V

-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V

· Organization

- Memory Cell Array

-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit

-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit

- Data Register

-X8 device(K9F1G08X0M): (2K + 64)bit x8bit

-X16 device(K9F1G16X0M): (1K + 32)bit x16bit

- Cache Register

-X8 device(K9F1G08X0M): (2K + 64)bit x8bit

-X16 device(K9F1G16X0M): (1K + 32)bit x16bit

· Automatic Program and Erase

- Page Program

-X8 device(K9F1G08X0M): (2K + 64)Byte

-X16 device(K9F1G16X0M): (1K + 32)Word

- Block Erase

-X8 device(K9F1G08X0M): (128K + 4K)Byte

-X16 device(K9F1G16X0M): (64K + 2K)Word

· Page Read Operation

- Page Size

- X8 device(K9F1G08X0M): 2K-Byte

- X16 device(K9F1G16X0M) : 1K-Word

- Random Read : 25ms(Max.)

- Serial Access : 50ns(Min.)*

*K9F1GXXQ0M : 80ns

· Fast Write Cycle Time

- Program time : 300ms(Typ.)

- Block Erase Time : 2ms(Typ.)

· Command/Address/Data Multiplexed I/O Port

· Hardware Data Protection

- Program/Erase Lockout During Power Transitions

· Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

· Command Register Operation

· Cache Program Operation for High Performance Program

· Power-On Auto-Read Operation

· Intelligent Copy-Back Operation

· Unique ID for Copyright Protection

· Package :

- K9F1GXXX0M-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1G08U0M-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1GXXX0M-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1G08U0M-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1G08U0M-V,F(WSOPI ) is the same device as

K9F1G08U0M-Y,P(TSOP1) except package type.

产品属性

  • 型号:

    K9F1G08D0M

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    128M x 8 Bit/64M x 16 Bit NAND Flash Memory

供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
23+
NA
10658
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
询价
SAMSUNG
23+
NA
301
专做原装正品,假一罚百!
询价
SAMSUNG
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
SAMSUNG/三星
20+
BGA
35830
原装优势主营型号-可开原型号增税票
询价
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
询价
SAMSUNG(三星)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
SAMSUNG
25+
BGA
7899
原厂直接发货进口原装
询价
SAMSUNG
25+23+
BGA
19856
绝对原装正品全新进口深圳现货
询价
SAMSUNG/三星
24+
NA/
107
优势代理渠道,原装正品,可全系列订货开增值税票
询价
SAMSUNG
FBGA
53650
一级代理 原装正品假一罚十价格优势长期供货
询价