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K9F1G08D0M中文资料三星数据手册PDF规格书
K9F1G08D0M规格书详情
GENERAL DESCRIPTION
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin ing of data. Even the write-intensive systems can take advantage of the K9F1GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
· Voltage Supply
-1.8V device(K9F1GXXQ0M): 1.70V~1.95V
- 2.65V device(K9F1GXXD0M) : 2.4~2.9V
-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
· Organization
- Memory Cell Array
-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit
-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit
- Data Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
· Automatic Program and Erase
- Page Program
-X8 device(K9F1G08X0M): (2K + 64)Byte
-X16 device(K9F1G16X0M): (1K + 32)Word
- Block Erase
-X8 device(K9F1G08X0M): (128K + 4K)Byte
-X16 device(K9F1G16X0M): (64K + 2K)Word
· Page Read Operation
- Page Size
- X8 device(K9F1G08X0M): 2K-Byte
- X16 device(K9F1G16X0M) : 1K-Word
- Random Read : 25ms(Max.)
- Serial Access : 50ns(Min.)*
*K9F1GXXQ0M : 80ns
· Fast Write Cycle Time
- Program time : 300ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
· Command Register Operation
· Cache Program Operation for High Performance Program
· Power-On Auto-Read Operation
· Intelligent Copy-Back Operation
· Unique ID for Copyright Protection
· Package :
- K9F1GXXX0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0M-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1GXXX0M-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1G08U0M-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1G08U0M-V,F(WSOPI ) is the same device as
K9F1G08U0M-Y,P(TSOP1) except package type.
产品属性
- 型号:
K9F1G08D0M
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
128M x 8 Bit/64M x 16 Bit NAND Flash Memory
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
NA |
10658 |
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品 |
询价 | ||
SAMSUNG |
23+ |
NA |
301 |
专做原装正品,假一罚百! |
询价 | ||
SAMSUNG |
24+ |
BGA |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
询价 | ||
SAMSUNG/三星 |
20+ |
BGA |
35830 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
SAMSUNG/三星 |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
SAMSUNG(三星) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
SAMSUNG |
25+ |
BGA |
7899 |
原厂直接发货进口原装 |
询价 | ||
SAMSUNG |
25+23+ |
BGA |
19856 |
绝对原装正品全新进口深圳现货 |
询价 | ||
SAMSUNG/三星 |
24+ |
NA/ |
107 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SAMSUNG |
FBGA |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |


