TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 0.8 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 4.0 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 600 V) • Enhancement-mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：266.13 Kbytes 页数：6 Pages

TOSHIBA

东芝

Insulated Triac

文件：459.09 Kbytes 页数：4 Pages

DYELEC

迪一电子

Super Fast Recovery Rectifiers

文件：92.29 Kbytes 页数：6 Pages

FORMOSA

美丽微半导体

Super Fast Recovery Rectifiers

文件：92.53 Kbytes 页数：6 Pages

FORMOSA

美丽微半导体