K847P中文资料TELEFUNKEN数据手册PDF规格书

描述 Description

The K827P and K847P consist of a phototransistor

optically coupled to a gallium arsenide infrared-emitting

diode in an 8-lead, resp. 16-lead plastic dual inline

package.

The elements are mounted on one leadframe using a

coplanar technique, providing a fixed distance between

input and output for highest safety requirements.

Applications

Galvanically separated circuits, non-interacting switches

特性 Features

K827P includes 2 isolator channels

K847P includes 4 isolator channels

DC isolation test voltage VIO = 2.5 kV

Low coupling capacitance of typical 0.3 pF

Current Transfer Ratio (CTR) of typical 100%

Low temperature coefficient of CTR

Wide ambient temperature range

Underwriters Laboratory (UL) 1577

recognized, file No. E-76222