1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM

FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL circuitry for wide output data valid window and future freguency scaling. • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O. • Separate independent read and write data ports with concurrent read and write

文件：201.87 Kbytes 页数：19 Pages

SAMSUNG

三星

1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM

FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL circuitry for wide output data valid window and future freguency scaling. • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O. • Separate independent read and write data ports with concurrent read and write

文件：201.87 Kbytes 页数：19 Pages

SAMSUNG

三星

1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM

FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL circuitry for wide output data valid window and future freguency scaling. • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O. • Separate independent read and write data ports with concurrent read and write

文件：201.87 Kbytes 页数：19 Pages

SAMSUNG

三星

1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM

文件：458.51 Kbytes 页数：20 Pages

SAMSUNG

三星