512Kx36 & 1Mx18 QDR II b4 SRAM

GENERAL DESCRIPTION The K7R163684B and K7R161884B are 18,874,368-bits QDR (Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7R163684B and 1,048,576 words by 18 bits for K7R161884B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL circuitry fo

文件：418.88 Kbytes 页数：18 Pages

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512Kx36 & 1Mx18 QDR II b4 SRAM

GENERAL DESCRIPTION The K7R163684B and K7R161884B are 18,874,368-bits QDR (Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7R163684B and 1,048,576 words by 18 bits for K7R161884B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL circuitry fo

文件：418.88 Kbytes 页数：18 Pages

SAMSUNG

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512Kx36 & 1Mx18 QDR II b4 SRAM

GENERAL DESCRIPTION The K7R163684B and K7R161884B are 18,874,368-bits QDR (Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7R163684B and 1,048,576 words by 18 bits for K7R161884B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL circuitry fo

文件：418.88 Kbytes 页数：18 Pages

SAMSUNG

三星

512Kx36 & 1Mx18 QDR II b4 SRAM

GENERAL DESCRIPTION The K7R163684B and K7R161884B are 18,874,368-bits QDR (Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7R163684B and 1,048,576 words by 18 bits for K7R161884B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL circuitry fo

文件：418.88 Kbytes 页数：18 Pages

SAMSUNG

三星

512Kx36 & 1Mx18 QDR II b4 SRAM

GENERAL DESCRIPTION The K7R163684B and K7R161884B are 18,874,368-bits QDR (Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 524,288 words by 36bits for K7R163684B and 1,048,576 words by 18 bits for K7R161884B. FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL circuitry fo

文件：418.88 Kbytes 页数：18 Pages

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512Kx36 & 1Mx18 QDRTM II b4 SRAM

文件：456.93 Kbytes 页数：19 Pages

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