K6X4008T1F-GF85中文资料512Kx8 bit Low Power and Low Voltage CMOS Static RAM数据手册Samsung规格书

描述 Description

FEATURES
·Process Technology: Full CMOS
·Organization: 512K´8
·Power Supply Voltage: 2.7~3.6V
·Low Data Retention Voltage: 2V(Min)
·Three State Outputs
·Package Type: 32-SOP-525, 32-TSOP2-400F/R, 32-TSOP1-0813.4F

GENERAL DESCRIPTION
The K6X4008T1Ffamilies are fabricated by SAMSUNGs advanced CMOS process technology.
The families support various operatingtemperature range and have various package
type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

特性 Features

·Process Technology: Full CMOS
·Organization: 512K´8
·Power Supply Voltage: 2.7~3.6V
·Low Data Retention Voltage: 2V(Min)
·Three State Outputs
·Package Type: 32-SOP-525, 32-TSOP2-400F/R, 32-TSOP1-0813.4F

GENERAL DESCRIPTION
The K6X4008T1Ffamilies are fabricated by SAMSUNGs advanced CMOS process technology.
The families support various operatingtemperature range and have various package
type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.