512Kx8 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4008C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008C1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：245.26 Kbytes 页数：10 Pages

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1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：223.7 Kbytes 页数：9 Pages

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1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：223.7 Kbytes 页数：9 Pages

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256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

文件：139.87 Kbytes 页数：12 Pages

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1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：223.7 Kbytes 页数：9 Pages

SAMSUNG

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1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：223.7 Kbytes 页数：9 Pages

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256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

文件：139.87 Kbytes 页数：12 Pages

SAMSUNG

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1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：223.7 Kbytes 页数：9 Pages

SAMSUNG

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1Mx4 Bit High Speed Static RAM(5.0V Operating)

GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：223.7 Kbytes 页数：9 Pages

SAMSUNG

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256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

文件：139.87 Kbytes 页数：12 Pages

SAMSUNG

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