256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

文件：188.68 Kbytes 页数：9 Pages

Samsung

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64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

文件：192.18 Kbytes 页数：9 Pages

Samsung

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256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

Samsung

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TSOP-44

Samsung

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上传：深圳市鸿昌盛电子科技有限公司

TSOP-44

Samsung

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上传：标准国际(香港)有限公司