首页 >K6R1008C1D-JI10T>规格书列表
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64Kx16BitHigh-SpeedCMOSStaticRAM(3.3VOperating)OperatedatCommercialandIndustrialTemperatureRanges. GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung semiconductor 三星三星半导体 | Samsung |
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