K524G2GACB-A050中文资料三星数据手册PDF规格书

GENERAL DESCRIPTION

The K524G2GACB is a Multi Chip Package Memory which combines 4Gbit NAND Flash Memory an 2Gbit DDR synchronous high data rate Dynamic RAM.

NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250µs on the (1K+32)Word page and an erase operation can be performed in typical 2ms on a (64K+2K)Word block. Data in the data register can be read out at 42ns cycle time per Word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the device′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The device is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

In 2Gbit Mobile DDR, Synchronous design make a device controlled precisely with the use of system clock. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES

• Operating Temperature : -25°C ~ 85°C

• Package : 137-ball FBGA Type - 10.5 x 13 x 1.2mmt, 0.8mm pitch

• Voltage Supply : 1.7V ~ 1.95V

• Organization

- Memory Cell Array :

(256M + 8M) x 16bit for 4Gb

(512M + 16M) x 16bit for 8Gb DDP

- Data Register : (1K + 32) x 16bit

• Automatic Program and Erase

- Page Program : (1K + 32)Word

- Block Erase : (64K + 2K)Word

• Page Read Operation

- Page Size : (1K + 32)Word

- Random Read : 40µs(Max.)

- Serial Access : 42ns(Min.)

• Fast Write Cycle Time

- Page Program time : 250µs(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

-Endurance : 100K Program/Erase Cycles with 1bit/256Word ECC for x16

• Command Driven Operation

• Unique ID for Copyright Protection

• VDD/VDDQ = 1.8V/1.8V

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Four banks operation

• Differential clock inputs(CK and CK)

• MRS cycle with address key programs

- CAS Latency ( 3 )

- Burst Length ( 2, 4, 8, 16 )

- Burst Type (Sequential & Interleave)

• EMRS cycle with address key programs

- Partial Array Self Refresh ( Full, 1/2, 1/4 Array )

- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8, 3/4, 3/8, 5/8, 7/8 )

• Internal Temperature Compensated Self Refresh

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).

• Data I/O transactions on both edges of data strobe, DM for masking.

• Edge aligned data output, center aligned data input.

• No DLL; CK to DQS is not synchronized.

• DM0 - DM3 for write masking only.

• Auto refresh duty cycle

- 7.8us

• Clock stop capability