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K4X51163PC-FGC3中文资料PDF规格书
K4X51163PC-FGC3规格书详情
FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• 1 /CS
• 1 CKE
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM, UDM for write masking only.
• Auto refresh duty cycle
- 7.8us for -25 to 85 °C
产品属性
- 型号:
K4X51163PC-FGC3
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
32M x16 Mobile-DDR SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
22+ |
BGA |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
询价 | ||
SAMSUNG |
23+ |
BGA |
20000 |
原厂原装正品现货 |
询价 | ||
SAMSUNG |
23+ |
标准封装 |
18000 |
询价 | |||
Samsung |
21+ |
BGA |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
SAMSUNG/三星 |
22+ |
BGA |
5660 |
现货,原厂原装假一罚十! |
询价 | ||
SAMSUNG/三星 |
23+ |
BGA |
20000 |
原装正品,支持实单 |
询价 | ||
SAMSUNG/三星 |
0819+ |
BGA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
SAMSUNG |
2016+ |
BGA |
5562 |
只做进口原装现货!或订货!假一赔十! |
询价 | ||
SAM |
22+ |
FBGA60 |
6980 |
原装现货,可开13%税票 |
询价 | ||
SAMSUNG |
06+ |
BGA |
6000 |
绝对原装自己现货 |
询价 |