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K4S643233H-N中文资料PDF规格书
K4S643233H-N规格书详情
GENERAL DESCRIPTION
The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per formance memory system applications.
FEATURES
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (4K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 90Balls FBGA with 0.8mm ball pitch ( -FXXX : Leaded, -HXXX : Lead Free).
产品属性
- 型号:
K4S643233H-N
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
Mobile-SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
BGA |
6200 |
特价库存 |
询价 | ||
SAMSUNG |
03/04+ |
BGA |
10976 |
全新原装100真实现货供应 |
询价 | ||
SANSUNG |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
SAM |
23+ |
NA |
262 |
专做原装正品,假一罚百! |
询价 | ||
SAMSUNG |
2023+ |
90FBGA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
SAMSUNG/三星 |
23+ |
NA/ |
3285 |
原装现货,当天可交货,原型号开票 |
询价 | ||
SAMSUNG |
22+ |
SSOP |
8000 |
原装正品支持实单 |
询价 | ||
SAMSUNG |
BGA |
1000 |
正品原装--自家现货-实单可谈 |
询价 | |||
SAMSUNG/三星 |
19+ |
BGA |
12075 |
进口原装现货 |
询价 | ||
SAMSUNG |
21+ |
90FBGA |
35200 |
一级代理/放心采购 |
询价 |