64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：130.199 Kbytes 页数：11 Pages

Samsung

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64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：130.199 Kbytes 页数：11 Pages

Samsung

三星

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：130.199 Kbytes 页数：11 Pages

Samsung

三星

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：130.199 Kbytes 页数：11 Pages

Samsung

三星

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：130.199 Kbytes 页数：11 Pages

Samsung

三星

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：130.199 Kbytes 页数：11 Pages

Samsung

三星

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：130.199 Kbytes 页数：11 Pages

Samsung

三星

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：130.199 Kbytes 页数：11 Pages

Samsung

三星

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：130.199 Kbytes 页数：11 Pages

Samsung

三星

64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S640832C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po

文件：130.199 Kbytes 页数：11 Pages

Samsung

三星