K4S560832B-TCSLASHL1L资料使用说明书贸易商-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
K4S560832B-TCSLASHL1L	文件：131.52 Kbytes Page：11 Pages	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po 文件：131.52 Kbytes 页数：11 Pages	Samsung 三星	Samsung
K4S560832B-TCSLASHL1H	文件：131.52 Kbytes Page：11 Pages	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL GENERAL DESCRIPTION The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are po 文件：131.52 Kbytes 页数：11 Pages	Samsung 三星	Samsung
K4S561632B-TC75	文件：0 bytes Page：0 Pages	SAMSUNG TSOP	Samsung 三星上传：深圳市广丰裕电子科技有限公司	Samsung
K4S561632C-TC75	文件：0 bytes Page：0 Pages	三星 TSOP54	三星上传：深圳市福安瓯科技有限公司	三星
K4S561632H-UC75	文件：0 bytes Page：0 Pages	SAMSUNG TSOP54	Samsung 三星上传：深圳硅原半导体有限公司	Samsung

更多K4S560832B-TCSLASHL1L供应商更新时间2025-9-26 17:21:00