16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

文件：108.44 Kbytes 页数：11 Pages

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16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

文件：108.44 Kbytes 页数：11 Pages

Samsung

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16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

文件：108.44 Kbytes 页数：11 Pages

Samsung

三星

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

文件：108.44 Kbytes 页数：11 Pages

Samsung

三星

16Mb H-die SDRAM Specification

SDRAM 16Mb H-die(x16) 512K x 16Bit x 2 Banks SDRAM GENERAL DESCRIPTION The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle

文件：108.44 Kbytes 页数：11 Pages

Samsung

三星

16Mb H-die SDRAM Specification

Samsung

三星