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K4H511638M-TLA2中文资料PDF规格书
K4H511638M-TLA2规格书详情
Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval(4K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
产品属性
- 型号:
K4H511638M-TLA2
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
128Mb DDR SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
2020+ |
TSSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
SAMSUNG |
23+ |
TSOP |
20000 |
原厂原装正品现货 |
询价 | ||
SAMSUNG/三星 |
22+ |
TSOP |
12032 |
现货,原厂原装假一罚十! |
询价 | ||
SAMSUNG |
23+ |
BGA |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
SAMSUNG |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
SAMSUNG |
23+ |
NA |
5556 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
询价 | ||
SAMSUNG |
2023+ |
TSOP |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
SAMSUNG/三星 |
2048+ |
TSSOP |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
SAMSUNG |
20+ |
TSOP |
11520 |
特价全新原装公司现货 |
询价 | ||
SAMSUMG |
22+23+ |
TSOP |
39276 |
绝对原装正品全新进口深圳现货 |
询价 |